Numerical Simulation of Crystal Growth bythe

Single crystals of (Cd,Zn)Te are an excellent substrate material for epitaxial growth of (Hg,Cd)Te layers and are usually grown by the vertical Bridgman method. We present a simulation of the whole growth process in two steps: In the rst step, the (stationary) heat transport in the furnace is modeled and calculated for diierent positions of the ampoule. This gives information about the most important parameter during this process: the temperature distribution in furnace and ampoule. The obtained temperatures are then used in the second step as boundary conditions for the (time dependent) simulation of temperature and convection in the ampoule. For the dis-cretization of the convection in the melt, a penalty method for treating parabolic problems on time dependent domains is presented. Only the use of adaptive nite element methods allows an eecient numerical simulation of the moving phase boundary, the convection in the melt and the temperature distribution in melt and crystal. Numerical results are presented for both furnace and ampoule simulation.